IndiumV3, Chine, Analysis, bibRecord, 000866

Epitaxial Growth of High Quality Nonpolar InN Films on LiGaO2 Substrates

Identifieur interne : 000866 ( Chine/Analysis ); précédent : 000865; suivant : 000867

Epitaxial Growth of High Quality Nonpolar InN Films on LiGaO2 Substrates

Auteurs : RBID : Pascal:11-0496280

Descripteurs français

Pascal (Inist)
- Epitaxie, Couche épitaxique, Mécanisme croissance, Composé III-V, Couche mince, Etat surface, Interface, Dislocation filetée, Densité dislocation, Epaisseur couche, Nucléation, Photoluminescence, Nitrure d'indium, InN, Substrat LiGaO2, LiGaO2, 8110A, 6172L, 6855J, 6460Q.

English descriptors

KwdEn :
- Dislocation density, Epitaxial layers, Epitaxy, Growth mechanism, III-V compound, Indium nitride, Interfaces, Layer thickness, Nucleation, Photoluminescence, Surface states, Thin films, Threading dislocation.

Abstract

A new system for obtaining high quality nonpolar InN films has been demonstrated. It is found that a-plane InN epitaxially grows on LiGaO₂ (001) with high phase purity and smooth surface. The in-plane epitaxial relationships are InN [0001] LiGaO₂ [100], and InN [11?00],// LiGaO₂ [010]. The interface between the substrate and a-plane InN is atomically abrupt. The threading dislocation density drops dramatically from 2×10¹⁰cm^-2of its initial growth stage to 3×10 cm^-2when the InN film thickness reaches 30 nm. which we believe is driven by dislocation merging or annihilation near the nucleation layer. The band edge emission from its photoluminescence spectra of as-grown a-plane InN is located at 0.72 eV. This novel high quality nonpolar a-plane InN on a LiGaO, (001) system opens up a new possibility for high-efficiency nonpolar InN devices.

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Pascal:11-0496280

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Epitaxial Growth of High Quality Nonpolar InN Films on LiGaO<sub>2</sub>
 Substrates</title>
<author><name>GUOQIANG LI</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>College of Materials Science and Engineering, Southern China University of Technology</s1>
<s2>Guangdong 510641</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Guangdong 510641</wicri:noRegion>
</affiliation>
<affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Department of Materials, University of Oxford, Parks Road</s1>
<s2>Oxford OX1 3PH</s2>
<s3>GBR</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Royaume-Uni</country>
<wicri:noRegion>Oxford OX1 3PH</wicri:noRegion>
<orgName type="university">Université d'Oxford</orgName>
<placeName><settlement type="city">Oxford</settlement>
<region type="nation">Angleterre</region>
<region type="région" nuts="1">Oxfordshire</region>
</placeName>
</affiliation>
</author>
<author><name>HUI YANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>College of Materials Science and Engineering, Southern China University of Technology</s1>
<s2>Guangdong 510641</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Guangdong 510641</wicri:noRegion>
</affiliation>
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<publicationStmt><idno type="inist">11-0496280</idno>
<date when="2011">2011</date>
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<term>Epitaxial layers</term>
<term>Epitaxy</term>
<term>Growth mechanism</term>
<term>III-V compound</term>
<term>Indium nitride</term>
<term>Interfaces</term>
<term>Layer thickness</term>
<term>Nucleation</term>
<term>Photoluminescence</term>
<term>Surface states</term>
<term>Thin films</term>
<term>Threading dislocation</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Epitaxie</term>
<term>Couche épitaxique</term>
<term>Mécanisme croissance</term>
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<term>Couche mince</term>
<term>Etat surface</term>
<term>Interface</term>
<term>Dislocation filetée</term>
<term>Densité dislocation</term>
<term>Epaisseur couche</term>
<term>Nucléation</term>
<term>Photoluminescence</term>
<term>Nitrure d'indium</term>
<term>InN</term>
<term>Substrat LiGaO2</term>
<term>LiGaO2</term>
<term>8110A</term>
<term>6172L</term>
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<front><div type="abstract" xml:lang="en">A new system for obtaining high quality nonpolar InN films has been demonstrated. It is found that a-plane InN epitaxially grows on LiGaO<sub>2</sub>
 (001) with high phase purity and smooth surface. The in-plane epitaxial relationships are InN [0001] LiGaO<sub>2</sub>
 [100], and InN [11?00],// LiGaO<sub>2</sub>
 [010]. The interface between the substrate and a-plane InN is atomically abrupt. The threading dislocation density drops dramatically from 2×10<sup>10 </sup>
cm<sup>-2 </sup>
of its initial growth stage to 3×10 cm<sup>-2 </sup>
when the InN film thickness reaches 30 nm. which we believe is driven by dislocation merging or annihilation near the nucleation layer. The band edge emission from its photoluminescence spectra of as-grown a-plane InN is located at 0.72 eV. This novel high quality nonpolar a-plane InN on a LiGaO, (001) system opens up a new possibility for high-efficiency nonpolar InN devices.</div>
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<fC01 i1="01" l="ENG"><s0>A new system for obtaining high quality nonpolar InN films has been demonstrated. It is found that a-plane InN epitaxially grows on LiGaO<sub>2</sub>
 (001) with high phase purity and smooth surface. The in-plane epitaxial relationships are InN [0001] LiGaO<sub>2</sub>
 [100], and InN [11?00],// LiGaO<sub>2</sub>
 [010]. The interface between the substrate and a-plane InN is atomically abrupt. The threading dislocation density drops dramatically from 2×10<sup>10 </sup>
cm<sup>-2 </sup>
of its initial growth stage to 3×10 cm<sup>-2 </sup>
when the InN film thickness reaches 30 nm. which we believe is driven by dislocation merging or annihilation near the nucleation layer. The band edge emission from its photoluminescence spectra of as-grown a-plane InN is located at 0.72 eV. This novel high quality nonpolar a-plane InN on a LiGaO, (001) system opens up a new possibility for high-efficiency nonpolar InN devices.</s0>
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Epitaxial Growth of High Quality Nonpolar InN Films on LiGaO2 Substrates

Epitaxial Growth of High Quality Nonpolar InN Films on LiGaO2 Substrates

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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